Title:
MAGNETISM−SENSITIVE ELEMENT AND METHOD FOR PRODUCING THE SAME, MAGNETIC HEAD, ENCODER AND MAGNETIC STORAGE UNIT USING IT
Document Type and Number:
WIPO Patent Application WO/2004/025744
Kind Code:
A1
Abstract:
A magnetism−sensitive element in which an insulation film sandwiched by two ferromagnetic films at a ferromagnetic tunnel junction is formed of an aluminum nitride film and a barrier at the ferromagnetic tunnel junction is set not higher than 0.4 eV. The aluminum nitride film is formed by nitriding an aluminum film, in particular, by touching the aluminum film to atomic nitrogen N&ast and causing nitriding reaction. A high sensitivity magnetism−sensitive element having a ferromagnetic tunnel junction where the variation rate of tunnel reluctance is high and the tunnel resistance is low is thereby obtained.
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Inventors:
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
Application Number:
PCT/JP2002/009426
Publication Date:
March 25, 2004
Filing Date:
September 13, 2002
Export Citation:
Assignee:
FUJITSU LTD (JP)
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
International Classes:
G01R33/09; G11B5/127; G11B5/33; G11B5/39; H01F10/32; H01F41/30; H01L43/08; H01L43/12; (IPC1-7): H01L43/08; H01L43/12; G11B5/39; G01R33/09; H01F10/30; H01F10/32; H01L27/105
Foreign References:
| JP2001236613A | 2001-08-31 | |||
| JP2000106462A | 2000-04-11 | |||
| EP1085586A2 | 2001-03-21 | |||
| JP2002197634A | 2002-07-12 |
Other References:
Sharma M. et al., "Spin-dependent tunneling junctions with AlN and AlON barriers", Applied Physics Letters, 02 October 2000, Vol. 77, No. 14, pages 2219 to 2221
Attorney, Agent or Firm:
Itoh, Tadahiko (Yebisu Garden Place Tower 20-3, Ebisu 4-chom, Shibuya-ku Tokyo, JP)
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