Title:
EMBEDDED SEMICONDUCTOR RANDOM ACCESS MEMORY STRUCTURE AND CONTROL METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/087804
Kind Code:
A1
Abstract:
An embedded semiconductor random access memory structure, comprising: a hafnium-based ferroelectric memory unit, which is used for storing information; and a tunneling field-effect transistor, which is connected to the memory unit, wherein the tunneling field-effect transistor is used for controlling the hafnium-based ferroelectric memory unit to perform a write operation and a read operation. A plurality of memory structures constitute a semiconductor memory array, and a control method therefor comprises the steps of writing 0, writing 1, reading and rewriting. According to the present invention, by utilizing the one-way conduction characteristic and the extremely low leakage current characteristic of a tunneling field-effect transistor, an operation voltage and the power consumption of a memory array can be reduced, and the integration density of memories can be increased. The present invention is suitable for manufacturing a semiconductor memory chip, and the control method and circuit in the present invention are also relatively simple.
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Inventors:
HUANG QIANQIAN (CN)
WANG KAIFENG (CN)
FU ZHIYUAN (CN)
HUANG RU (CN)
WANG KAIFENG (CN)
FU ZHIYUAN (CN)
HUANG RU (CN)
Application Number:
PCT/CN2022/112021
Publication Date:
May 25, 2023
Filing Date:
August 12, 2022
Export Citation:
Assignee:
UNIV BEIJING (CN)
International Classes:
G11C11/409
Foreign References:
| CN114171081A | 2022-03-11 | |||
| CN101777572A | 2010-07-14 | |||
| CN102185108A | 2011-09-14 |
Attorney, Agent or Firm:
BEIJING WANXIANGXINYUE INTELLECTUAL PROPERTY OFFICE (CN)
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