Title:
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 UNDER BIAXIAL COMPRESSIVE STRAIN
Document Type and Number:
WIPO Patent Application WO2006057645
Kind Code:
A9
Abstract:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.
Inventors:
CHAN VICTOR (US)
FISCHETTI MASSIMO V (US)
HERGENROTHER JOHN M (US)
LEONG MEIKEI (US)
RENGARAJAN RAJESH (US)
REZNICEK ALEXANDER (US)
SOLOMON PAUL (US)
SUNG CHUN-YUNG (US)
YANG MIN (US)
FISCHETTI MASSIMO V (US)
HERGENROTHER JOHN M (US)
LEONG MEIKEI (US)
RENGARAJAN RAJESH (US)
REZNICEK ALEXANDER (US)
SOLOMON PAUL (US)
SUNG CHUN-YUNG (US)
YANG MIN (US)
Application Number:
PCT/US2004/042179
Publication Date:
September 14, 2006
Filing Date:
December 15, 2004
Export Citation:
Assignee:
IBM (US)
CHAN VICTOR (US)
FISCHETTI MASSIMO V (US)
HERGENROTHER JOHN M (US)
LEONG MEIKEI (US)
RENGARAJAN RAJESH (US)
REZNICEK ALEXANDER (US)
SOLOMON PAUL (US)
SUNG CHUN-YUNG (US)
YANG MIN (US)
CHAN VICTOR (US)
FISCHETTI MASSIMO V (US)
HERGENROTHER JOHN M (US)
LEONG MEIKEI (US)
RENGARAJAN RAJESH (US)
REZNICEK ALEXANDER (US)
SOLOMON PAUL (US)
SUNG CHUN-YUNG (US)
YANG MIN (US)
International Classes:
H01L29/02; H01L21/762; H01L21/8238; H01L29/04; H01L31/109; H01L29/786
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