Title:
ENHANCEMENT-MODE HEMT DEVICE INHIBITING CURRENT COLLAPSE EFFECT AND PREPARATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2017/088253
Kind Code:
A1
Abstract:
Provided are an enhancement-mode HEMT device inhibiting the current collapse effect and a preparation method thereof. The HEMT device comprises a heterostructure and a source electrode (91), a drain electrode (92) and a gate electrode (93) which are connected to the heterostructure. The heterostructure comprises a first semiconductor serving as a channel layer (30) and a second semiconductor serving as a barrier layer (50), wherein the second semiconductor is formed on the first semiconductor, two-dimensional electron gas is formed inside the heterostructure, a quantum well layer (60) and a third semiconductor are successively formed on the second semiconductor, the conduction types of the third semiconductor and the second semiconductor are different, and the gate electrode (93) makes electrical contact with the third semiconductor. A quantum well structure is directly integrated in a gate region and a non-gate region in an enhancement-mode HEMT device, so that the device can emit light while in a turned-on state. The emitted light can be effectively radiated onto a surface region between a gate-drain and a gate-source and reach the interior of a material, so that the process of releasing electrons trapped by various defect states can be quickened, thereby effectively inhibiting the current collapse effect of the device.
Inventors:
SUN QIAN (CN)
ZHOU YU (CN)
FENG MEIXIN (CN)
LI SHUIMING (CN)
GAO HONGWEI (CN)
YANG HUI (CN)
ZHOU YU (CN)
FENG MEIXIN (CN)
LI SHUIMING (CN)
GAO HONGWEI (CN)
YANG HUI (CN)
Application Number:
PCT/CN2015/099391
Publication Date:
June 01, 2017
Filing Date:
December 29, 2015
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS CAS (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN101252088A | 2008-08-27 | |||
| US20030020092A1 | 2003-01-30 | |||
| CN102916043A | 2013-02-06 |
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY(SPECIAL GENERAL PARTNERSHIP) (CN)
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