Title:
EPITAXIAL GROWTH APPARATUS
Document Type and Number:
WIPO Patent Application WO/1999/043875
Kind Code:
A1
Abstract:
An epitaxial growth apparatus for forming an epitaxially grown film on a surface of a semiconductor wafer substrate by a CVD reaction in a reaction chamber, provided with a means for forming a laminar flow of a gas, which does not contain a silicon material gas, along the region of an inner surface of the reaction chamber which surrounds an upper portion of the semiconductor wafer placed in the chamber and/or the region thereof which transmits radiant heat sent from a heating means outside the reaction chamber.
Inventors:
INOUE KAZUTOSHI (JP)
IMAI MASATO (JP)
MAYUSUMI MASANORI (JP)
NAKAHARA SHINJI (JP)
IMAI MASATO (JP)
MAYUSUMI MASANORI (JP)
NAKAHARA SHINJI (JP)
Application Number:
PCT/JP1999/000935
Publication Date:
September 02, 1999
Filing Date:
February 26, 1999
Export Citation:
Assignee:
SUPER SILICON CRYSTAL RES INST (JP)
INOUE KAZUTOSHI (JP)
IMAI MASATO (JP)
MAYUSUMI MASANORI (JP)
NAKAHARA SHINJI (JP)
INOUE KAZUTOSHI (JP)
IMAI MASATO (JP)
MAYUSUMI MASANORI (JP)
NAKAHARA SHINJI (JP)
International Classes:
C23C16/455; C23C16/48; C30B25/14; C23C16/44; (IPC1-7): C30B25/14; C30B29/06; H01L21/205
Foreign References:
| JPS5421973A | 1979-02-19 |
Attorney, Agent or Firm:
Sato, Masatoshi (Toranomon 1-chome Minato-ku Tokyo, JP)
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