Title:
EPITAXIAL GROWTH FURNACE
Document Type and Number:
WIPO Patent Application WO/2000/007228
Kind Code:
A1
Abstract:
An epitaxial growth furnace for growing an epitaxial layer on a semiconductor wafer by CVD in reactive chamber includes a wafer holder, which comprises an opening for exposing the area to be processed of the semiconductor wafer, a flange for engagement with the whole chamfered edge of the area to be processed of the semiconductor wafer, and a plurality of jaws to be engaged detachably with the border of the semiconductor wafer on the back of the area to be processed.
Inventors:
IMAI MASATO (JP)
NAKAHARA SHINJI (JP)
MAYUSUMI MASANORI (JP)
INOUE KAZUTOSHI (JP)
GIMA SHINTOSHI (JP)
NAKAHARA SHINJI (JP)
MAYUSUMI MASANORI (JP)
INOUE KAZUTOSHI (JP)
GIMA SHINTOSHI (JP)
Application Number:
PCT/JP1999/003993
Publication Date:
February 10, 2000
Filing Date:
July 26, 1999
Export Citation:
Assignee:
SUPER SILICON CRYSTAL RES INST (JP)
IMAI MASATO (JP)
NAKAHARA SHINJI (JP)
MAYUSUMI MASANORI (JP)
INOUE KAZUTOSHI (JP)
GIMA SHINTOSHI (JP)
IMAI MASATO (JP)
NAKAHARA SHINJI (JP)
MAYUSUMI MASANORI (JP)
INOUE KAZUTOSHI (JP)
GIMA SHINTOSHI (JP)
International Classes:
C23C16/44; C23C16/455; C23C16/458; C30B25/08; C30B25/12; H01L21/205; H01L21/67; (IPC1-7): H01L21/205; C30B16/00; C30B16/56; H01L21/31; H01L21/365; H01L21/68
Foreign References:
| JPH08181196A | 1996-07-12 | |||
| JPH06267855A | 1994-09-22 | |||
| JPH04324954A | 1992-11-13 |
Attorney, Agent or Firm:
Sato, Masatoshi (Tranomon 1-chome Minato-ku Tokyo, JP)
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