EPITAXIAL-SILICON-WAFER MANUFACTURING METHOD AND EPITAXIAL SILICON WAFER

Title:

EPITAXIAL-SILICON-WAFER MANUFACTURING METHOD AND EPITAXIAL SILICON WAFER

Document Type and Number:

WIPO Patent Application WO/2015/129133

Kind Code:

A1

Abstract:

This epitaxial-silicon-wafer manufacturing method includes an epitaxial-film formation step (step S2) in which an epitaxial film is grown on a silicon wafer to which boron has been added, the resistivity of said silicon wafer being less than or equal to 100 mΩ∙cm, and a heat-treatment step (step S3) in which the epitaxial silicon wafer is heat-treated at a temperature less than 900°C.

Inventors:

TORIGOE KAZUHISA (JP)
ONO TOSHIAKI (JP)

Application Number:

PCT/JP2014/083682

Publication Date:

September 03, 2015

Filing Date:

December 19, 2014

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SUMCO CORP (JP)

International Classes:

C23C16/24; H01L21/20; C30B25/20; H01L21/205; H01L21/324

Domestic Patent References:

WO2001056071A1	2001-08-02
WO2013153724A1	2013-10-17

Foreign References:

JP2006040972A	2006-02-09
JPH09283529A	1997-10-31
JP2010141272A	2010-06-24

Other References:

WATARU SUGIMURA ET AL.: "Konodo Tenka CZ -Si Kesshochu no Sekishutsu Kaku Keisei Kyodo", 2005 NEN (HEISEI 17 NEN) SHUKI DAI 66 KAI EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, 2005, pages 319
KOJI SUEOKA ET AL.: "Effect of Heavy Boron Doping on Oxygen Precipitation in CzochralskiSilicon Substrates of Epitaxial Wafers", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 2, 2000, pages 756 - 762, XP055222230

Attorney, Agent or Firm:

KINOSHITA & ASSOCIATES (JP)
Bottom intellectual property office of patent business corporation Tatsuyuki (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: DESALINATION SYSTEM

Next Patent: METHOD FOR PRODUCING CAST ARTICLE AND BREATHABLE MOLD