Title:
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, PN JUNCTION DIODE, AND PRODUCTION METHOD FOR EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/014883
Kind Code:
A1
Abstract:
Provided is an epitaxial substrate for a semiconductor element in which the diffusion of elements from a cap layer is suitably minimized, and which has excellent characteristics. The epitaxial substrate for a semiconductor element, in which a group of group III nitride layers is formed as a laminate on a base substrate such that the (0001) crystal surface is roughly parallel to the substrate surface, is provided with: a channel layer comprising a first group III nitride composed of Inx1Aly1Gaz1N (x1 + y1 + z1 = 1; z1 > 0); a barrier layer comprising a second group III nitride composed of Inx2Aly2N (x2 + y2 = 1; x2 > 0; y2 > 0); a diffusion barrier layer comprising AlN and having a thickness of at least 3 nm; and a cap layer comprising a third group III nitride composed of Inx3Aly3Gaz3N (x3 + y3 + z3 = 1; z3 > 0).
Inventors:
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUGIYAMA Tomohiko (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
杉山 智彦 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUGIYAMA Tomohiko (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
杉山 智彦 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 日本碍子株式会社内 Aichi, 〒4678530, JP)
Application Number:
JP2011/066948
Publication Date:
February 02, 2012
Filing Date:
July 26, 2011
Export Citation:
Assignee:
NGK INSULATORS, LTD. (2-56, Suda-cho Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 〒4678530, JP)
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUGIYAMA Tomohiko (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 〒4678530, JP)
MIYOSHI Makoto (1-11-33, Konomiya Inazawa-sh, Aichi 37, 〒4928137, JP)
三好 実人 (〒37 愛知県稲沢市国府宮１－１１－３３ Aichi, 〒4928137, JP)
SUGIYAMA Tomohiko (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
International Classes:
H01L21/338; C23C16/34; H01L21/205; H01L29/778; H01L29/812; H01L29/861
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (10th floor, Sumitomo-seimei OBP Plaza Bldg. 4-70, Shiromi 1-chome, Chuo-ku, Osaka-sh, Osaka 01, 〒5400001, JP)
Claims:
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