Title:
EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/045172
Kind Code:
A1
Abstract:
This epitaxial substrate is provided with: a GaN substrate of which a major surface is a c-surface; and a GaN layer epitaxially grown on the major surface. The major surface includes a region in which an off-angle is more than or equal to 0.4°, and the GaN layer grown over the region has an E3 trap concentration of less than or equal to 3.0 × 1013 cm-3.
Inventors:
HORIKIRI FUMIMASA (JP)
NARITA YOSHINOBU (JP)
SHIOJIMA KENJI (JP)
NARITA YOSHINOBU (JP)
SHIOJIMA KENJI (JP)
Application Number:
PCT/JP2019/032502
Publication Date:
March 05, 2020
Filing Date:
August 20, 2019
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/20; C23C16/34; C30B25/20; C30B29/38; H01L21/205
Domestic Patent References:
| WO2018123285A1 | 2018-07-05 |
Foreign References:
| JP2010141037A | 2010-06-24 | |||
| JP2010219490A | 2010-09-30 | |||
| JP2007299793A | 2007-11-15 |
Other References:
TANAKA, TAKESHI ET AL.: "Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 2016, pages 06110 - 061101-4, XP055690272
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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