EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME

Title:

EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME

Document Type and Number:

WIPO Patent Application WO/2014/084550

Kind Code:

A1

Abstract:

An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.

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Inventors:

KANG SEOK MIN (KR)
KIM JI HYE (KR)
BAE HEUNG TEAK (KR)

Application Number:

PCT/KR2013/010646

Publication Date:

June 05, 2014

Filing Date:

November 21, 2013

Export Citation:

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Assignee:

LG INNOTEK CO LTD (KR)

International Classes:

H01L21/20

Foreign References:

US20100119849A1	2010-05-13
KR20110116203A	2011-10-25
KR20070035078A	2007-03-29
KR20120004214A	2012-01-12
US20060105559A1	2006-05-18

Attorney, Agent or Firm:

SEO, Kyo Jun (KR)
서교준 (KR)

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