Title:
ESD PROTECTION CIRCUIT OF RADIO FREQUENCY POWER AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2023/050990
Kind Code:
A1
Abstract:
An ESD protection circuit (100) of a radio frequency power amplifier, comprising an input end (RFin), an output end (RFout), a transistor (Q0), a bias circuit (1), and a first ESD protection circuit (EC1). A base of the transistor (Q0) is connected to the input end (RFin), an emitter is grounded, and a collecting electrode is separately connected to the output end (RFout) and a circuit voltage source (Vcc); the bias circuit (1) is connected between the base and a reference voltage source (Vreg) of the transistor (Q0) in series; a base (B) of a first transistor (Q1) of the first ESD protection circuit (EC1) is configured to be open, a collecting electrode (C) is connected to the circuit voltage source (Vcc), and an emitter (E) is connected to a positive electrode of a first diode (D1); a positive electrode of the first diode (D1) is grounded; a positive electrode of a second diode (D2) is grounded, and a negative electrode is connected to the collecting electrode (C) of the first transistor (Q1); a positive electrode of a third diode (D3) is grounded, and a negative electrode is connected to the collecting electrode of the first transistor (Q1). The ESD protection circuit (100) of the radio frequency power amplifier occupies a small chip area, and has good reliability and lower cost.
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Inventors:
PENG YANJUN (CN)
XUAN KAI (CN)
GUO JIASHUAI (CN)
XUAN KAI (CN)
GUO JIASHUAI (CN)
Application Number:
PCT/CN2022/108103
Publication Date:
April 06, 2023
Filing Date:
July 27, 2022
Export Citation:
Assignee:
LANSUS TECH INC (CN)
International Classes:
H02H9/04
Foreign References:
CN215990207U | 2022-03-08 | |||
US20050122644A1 | 2005-06-09 | |||
US6600356B1 | 2003-07-29 | |||
CN113037228A | 2021-06-25 | |||
CN101517671A | 2009-08-26 | |||
CN104143820A | 2014-11-12 |
Attorney, Agent or Firm:
SHENZHEN JUNXINCHENG INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)
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