Title:
ESD PROTECTION THIN FILM TRANSISTOR AND ESD PROTECTION STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2020/211165
Kind Code:
A1
Abstract:
The present invention provides an ESD protection thin film transistor and an ESD protection structure. The ESD protection thin film transistor comprises: a substrate, an active layer provided on the substrate, a gate insulating layer provided on the active layer and the substrate, a gate provided on the gate insulating layer and opposite to the active layer, an interlayer insulating layer provided on the gate and the gate insulating layer, and a source and a drain which are provided on the interlayer insulating layer and distributed at intervals. The active layer comprises a channel section, and a source contact section and a drain contact section which are respectively located on two sides of the channel section, and the channel section is at least partially bent. Compared with an existing linear channel, the channel in the present invention is configured to be in a bent shape, and on the premise that the size of the ESD protection thin film transistor is not increased, the channel length of the ESD protection thin film transistor is extended, so that the leakage current of the ESD protection thin film transistor is effectively reduced.
Inventors:
XIAO XIANG (CN)
Application Number:
PCT/CN2019/088662
Publication Date:
October 22, 2020
Filing Date:
May 27, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/786; H01L27/12
Foreign References:
| CN103913865A | 2014-07-09 | |||
| CN208507683U | 2019-02-15 | |||
| US7439565B2 | 2008-10-21 | |||
| CN105810677A | 2016-07-27 | |||
| CN102104066A | 2011-06-22 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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