Title:
ESL-TYPE TFT SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/061813
Kind Code:
A1
Abstract:
Provided are an ESL-type TFT substrate and a manufacturing method therefor. According to the ESL-type TFT substrate, conducted regions subjected to plasma doping are formed on two sides of an active layer (20), and the distance between the two regions, i.e., the width (L0) of a channel region (203) is less than the distance (L1) between a source electrode (41) and a drain electrode (42), so that a relatively small actual channel length is provided, and current increase of the source electrode (41) and the drain electrode (42) can be facilitated, and the problem of small current of the source electrode (41) and the drain electrode (42) of an existing ESL-type TFT substrate can be solved. The method for manufacturing the ESL-type TFT substrate comprises: performing plasma doping on regions on two sides of an active layer (20) to form conducted regions, and setting the distance between the two regions, i.e., the width (L0) of a channel region (203) to be less than the distance (L1) between a source electrode (41) and a drain electrode (42), so that the actual channel length of TFT can be reduced, the current increase of the source electrode (41) and the drain electrode (42) can be facilitated, and the problem of small current of the source electrode (41) and the drain electrode (42) of an existing ESL-type TFT substrate can be solved.
Inventors:
SHI LONGQIANG (CN)
Application Number:
PCT/CN2017/114428
Publication Date:
April 04, 2019
Filing Date:
December 04, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L27/12; H01L21/77
Foreign References:
| CN104282768A | 2015-01-14 | |||
| CN104966698A | 2015-10-07 | |||
| US20130187162A1 | 2013-07-25 | |||
| US20170110528A1 | 2017-04-20 | |||
| CN103529608A | 2014-01-22 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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