Title:
ETCH AND DEPOSITION CONTROL FOR PLASMA IMPLANTATION
Document Type and Number:
WIPO Patent Application WO2006002138
Kind Code:
A3
Abstract:
A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surfacemodifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
Inventors:
SINGH VIKRAM (US)
PERSING HAROLD (US)
MILLER TIMOTHY (US)
GUPTA ATUL (US)
FANG ZIWEI (US)
PERSING HAROLD (US)
MILLER TIMOTHY (US)
GUPTA ATUL (US)
FANG ZIWEI (US)
Application Number:
PCT/US2005/021883
Publication Date:
April 06, 2006
Filing Date:
June 21, 2005
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
SINGH VIKRAM (US)
PERSING HAROLD (US)
MILLER TIMOTHY (US)
GUPTA ATUL (US)
FANG ZIWEI (US)
SINGH VIKRAM (US)
PERSING HAROLD (US)
MILLER TIMOTHY (US)
GUPTA ATUL (US)
FANG ZIWEI (US)
International Classes:
H01L21/223; C03C15/00; C23C14/00
Domestic Patent References:
| WO2004013371A2 | 2004-02-12 |
Foreign References:
| US5969398A | 1999-10-19 | |||
| US20040107909A1 | 2004-06-10 | |||
| US6403453B1 | 2002-06-11 | |||
| EP0930643A2 | 1999-07-21 | |||
| US5561072A | 1996-10-01 |
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