Title:
ETCH PROCESS FOR CONTROLLING PATTERN CD AND INTEGRITY IN MULTI-LAYER MASKS
Document Type and Number:
WIPO Patent Application WO/2012/129209
Kind Code:
A3
Abstract:
A method of patterning a multi-layer mask (150, 150', 220) is described. The method includes preparing a multi-layer mask (150, 150', 220) on a substrate (1 10, 1 10', 200), wherein the multi-layer mask (150, 150', 220) includes a lithographic layer (226) and an intermediate mask layer (222) underlying the lithographic layer (226), and wherein the intermediate mask layer (222) comprises a carbon-containing compound. The method further includes: establishing an etch process recipe for transferring a pattern (230), that is formed in the lithographic layer (226) and characterized by an initial pattern critical dimension (CD) (152, 152', 232, 232'), to the intermediate mask layer (222); establishing at least one parametric relationship between an intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272') to be formed in the intermediate mask layer (222) and at least one process parameter, wherein the at least one parametric relationship provides process conditions capable of increasing and decreasing the initial pattern CD (152, 152', 232, 232') to the intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272'); selecting a target process condition to achieve a target CD adjustment between the initial pattern CD (152, 152', 232, 232') and the intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272'); and transferring the pattern from the lithographic layer (226) to the intermediate mask layer (222) using the target process condition.
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Inventors:
LUONG VINH HOANG (US)
KO AKITERU (US)
KO AKITERU (US)
Application Number:
PCT/US2012/029767
Publication Date:
November 15, 2012
Filing Date:
March 20, 2012
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
TOKYO ELECTRON AMERICA INC (US)
LUONG VINH HOANG (US)
KO AKITERU (US)
TOKYO ELECTRON AMERICA INC (US)
LUONG VINH HOANG (US)
KO AKITERU (US)
International Classes:
H01L21/66; H01L21/033
Domestic Patent References:
| WO2010110878A1 | 2010-09-30 |
Foreign References:
| US20080014533A1 | 2008-01-17 | |||
| US6350390B1 | 2002-02-26 | |||
| US20090194503A1 | 2009-08-06 | |||
| US20110039416A1 | 2011-02-17 | |||
| US20090047789A1 | 2009-02-19 |
Attorney, Agent or Firm:
DAVIDSON, Kristi, L. et al. (Herron & Evans LLP,2700 Carew Tower,441 Vine Stree, Cincinnati OH, US)
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