Title:
ETCH STOP CONTROL FOR MEMS DEVICE FORMATION
Document Type and Number:
WIPO Patent Application WO2004013038
Kind Code:
A3
Abstract:
A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.
Inventors:
HORNING ROBERT D
Application Number:
PCT/US2003/025806
Publication Date:
December 02, 2004
Filing Date:
August 05, 2003
Export Citation:
Assignee:
HONEYWELL INT INC (US)
International Classes:
B81B7/02; B81C1/00; H01L21/306; H01L29/84; (IPC1-7): B81C1/00
Foreign References:
| US20020075021A1 | 2002-06-20 | |||
| US4549427A | 1985-10-29 | |||
| US5528452A | 1996-06-18 |
Other References:
ASHRUF C M A ET AL: "Electrochemical etch stop engineering for bulk micromachining", MECHATRONICS, PERGAMON PRESS, OXFORD, GB, vol. 8, no. 5, 1 August 1998 (1998-08-01), pages 595 - 612, XP004134441, ISSN: 0957-4158
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