ETCHANT COMPOSITION AND ETCHING METHOD

Title:

ETCHANT COMPOSITION AND ETCHING METHOD

Document Type and Number:

WIPO Patent Application WO/2018/163650

Kind Code:

A1

Abstract:

Provided is an etchant composition useful for etching indium oxide-based layers, said etchant composition being free from hydrogen chloride but yet causing little width thinning by etching, showing good linearity and being capable of forming a thin wire with a desired width. The etchant composition, which is to be used for etching indium oxide-based layers, comprises: (A) 0.01-15 mass% of hydrogen peroxide; (B) 1-40 mass% of sulfuric acid; (C) 0.01-10 mass% of an amide compound represented by general formula (1) [wherein R1, R2 and R3 represent hydrogen, an alkyl group having 1-8 carbon atoms, etc.]; (D) 0.00001-0.1 mass% of a halide ion source (excluding a fluoride ion source); (E) 0.001-1 mass% of a fluoride ion source; and water.

More Like This:

JP3358604	SOLUTION AND METHOD FOR RECOVERING PLATINUM GROUP IMPURITIES
JP4419315	Substrate cleaning method and substrate cleaning equipment
WO/2004/061980	METHOD FOR ROUGHENING A SURFACE OF A BODY, AND OPTOELECTRONIC COMPONENT

Inventors:

OMIYA DAISUKE (JP)

Application Number:

PCT/JP2018/002522

Publication Date:

September 13, 2018

Filing Date:

January 26, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

ADEKA CORP (JP)

International Classes:

H01L21/308

Domestic Patent References:

WO2014168037A1

2014-10-16

Foreign References:

JP2013084680A	2013-05-09
JP2013135039A	2013-07-08
JP2016178103A	2016-10-06