Title:
ETCHANT AND ELECTRONIC DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/078512
Kind Code:
A3
Abstract:
Disclosed is an etching fluid for electronic devices, comprising: a transition metal and/or a transition metal salt; and a hydrofluoric acid and/or a fluoride salt. The etchant selectively etches an intrinsic semiconductor layer, in an electronic device which has a doped semiconductor layer situated between metal electrodes and said intrinsic semiconductor layer.
Inventors:
PARK KWI HONG (KR)
LEE KI BEOM (KR)
CHO SAM YOUNG (KR)
KU BYUNG SOO (KR)
CHOI JEONG HEON (KR)
LEE KI BEOM (KR)
CHO SAM YOUNG (KR)
KU BYUNG SOO (KR)
CHOI JEONG HEON (KR)
Application Number:
PCT/KR2010/008941
Publication Date:
October 27, 2011
Filing Date:
December 14, 2010
Export Citation:
Assignee:
DONGJIN SEMICHEM CO LTD (KR)
PARK KWI HONG (KR)
LEE KI BEOM (KR)
CHO SAM YOUNG (KR)
KU BYUNG SOO (KR)
CHOI JEONG HEON (KR)
PARK KWI HONG (KR)
LEE KI BEOM (KR)
CHO SAM YOUNG (KR)
KU BYUNG SOO (KR)
CHOI JEONG HEON (KR)
International Classes:
C09K11/08; H01L21/306
Foreign References:
| US20060027889A1 | 2006-02-09 | |||
| US6200898B1 | 2001-03-13 | |||
| US20020009833A1 | 2002-01-24 | |||
| US6753606B2 | 2004-06-22 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (Seocho-dong Seocho-gu, Seoul 137-875, KR)
Download PDF:
Claims: