Title:
ETCHANT FOR SELECTIVELY ETCHING COPPER AND COPPER ALLOY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING SAID ETCHANT
Document Type and Number:
WIPO Patent Application WO/2020/105605
Kind Code:
A1
Abstract:
The present invention relates to an etchant capable of selectively etching copper and a copper alloy while suppressing dissolution of nickel, tin, gold, and an alloy thereof. This etchant is characterized by including: (A) 5-10.5% by mass of hydrogen peroxide with respect to the total mass of the etchant; (B) 0.3-6% by mass of nitric acid with respect to the total mass of the etchant; (C) one or more nitrogen-containing 5-membered ring compounds selected from the group consisting of triazoles and tetrazoles, which may have one or more substituents selected from the group consisting of substituted amino groups having a C1-6 alkyl group, an amino group, and a substituent selected from the group consisting of a C1-6 alkyl group and a phenyl group; and (D) (d1) one or more pH adjusters selected from the group consisting of an alkali metal hydroxide, ammonia, an amine, and an ammonium salt, (d2) a phosphonic acid compound, or (d3) a combination of (d1) and (d2).
Inventors:
FUKAZAWA SHUN (JP)
FUJII TOMOKO (JP)
MATSUNAGA HIROSHI (JP)
FUJII TOMOKO (JP)
MATSUNAGA HIROSHI (JP)
Application Number:
PCT/JP2019/045158
Publication Date:
May 28, 2020
Filing Date:
November 19, 2019
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C23F1/18; H01L21/308
Domestic Patent References:
| WO2011099624A1 | 2011-08-18 | |||
| WO2015075765A1 | 2015-05-28 | |||
| WO2011074589A1 | 2011-06-23 | |||
| WO2017188108A1 | 2017-11-02 |
Foreign References:
| JP2016098386A | 2016-05-30 | |||
| JP2004043895A | 2004-02-12 |
Other References:
See also references of EP 3885468A4
Attorney, Agent or Firm:
KOBAYASHI Hiroshi et al. (JP)
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