Title:
ETCHING CHARACTERISTIC ESTIMATION METHOD, PROGRAM, INFORMATION PROCESSING DEVICE, PROCESSING DEVICE, DESIGN METHOD, AND PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/017303
Kind Code:
A1
Abstract:
The present invention determines the etching characteristics in the case that hydrogen is contained in etching gas such as CHxFy gas and the processing subject contains a nitrogen compound. In a flux computation procedure, an information processing device computes a plurality of fluxes in a surface reaction model in which the processing surface of the processing subject includes a protective film layer and a reaction layer. In a protective film layer computation procedure, the information processing device computes the thickness of the protective film layer by switching elimination items, which describe the elimination of the protective film layer, in accordance with the result of comparing the plurality of fluxes in a computation formula that computes the thickness of the protective film layer on the basis of the elimination items.
Inventors:
KUBOI NOBUYUKI (JP)
TATSUMI TETSUYA (JP)
TATSUMI TETSUYA (JP)
Application Number:
PCT/JP2015/067141
Publication Date:
February 04, 2016
Filing Date:
June 15, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2011115023A1 | 2011-09-22 |
Foreign References:
| JP2014029982A | 2014-02-13 | |||
| JP2012186394A | 2012-09-27 |
Attorney, Agent or Firm:
MARUSHIMA, TOSHIKAZU (JP)
Toshikazu Marushima (JP)
Toshikazu Marushima (JP)
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