Title:
ETCHING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/229078
Kind Code:
A1
Abstract:
According to the inventive concept, an etching composition includes about 20 wt% to about 30 wt% of an oxidizer, a buffer including at least one among ammonium phosphate and a material represented by Formula 1, and a pH adjustor including alkyl ammonium hydroxide, wherein the etching composition may have a pH of 7 to 9.
Inventors:
KANG BONGKYUN (KR)
KLIPP ANDREAS (DE)
CHO MINHYUNG (KR)
BAE JINHYE (KR)
OH JUNG-MIN (KR)
LIM GEONJA (KR)
BAE SANG WON (KR)
LEE HYOSAN (KR)
KLIPP ANDREAS (DE)
CHO MINHYUNG (KR)
BAE JINHYE (KR)
OH JUNG-MIN (KR)
LIM GEONJA (KR)
BAE SANG WON (KR)
LEE HYOSAN (KR)
Application Number:
PCT/KR2022/007584
Publication Date:
November 30, 2023
Filing Date:
May 27, 2022
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
BASF SE (DE)
BASF SE (DE)
International Classes:
C09K13/06; C09K15/30; H01L21/311
Domestic Patent References:
| WO2020234395A1 | 2020-11-26 | |||
| WO2019192866A1 | 2019-10-10 |
Foreign References:
| US6592777B2 | 2003-07-15 | |||
| US20060226122A1 | 2006-10-12 | |||
| US20160133512A1 | 2016-05-12 | |||
| US20160372413A1 | 2016-12-22 |
Other References:
ROY, R. N. ET AL.: "Thermodynamic constants of N-[tris(hydroxymethyl)methyl-3-amino]propanesulfonic acid (Taps) from the temperatures 278.15K to 328.15K", THE JOURNAL OF CHEMICAL THERMODYNAMICS, vol. 38, 2006, pages 413 - 417, XP024913625, DOI: 10.1016/j.jct.2005.06.009
Attorney, Agent or Firm:
KORYO IP & LAW (KR)
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