Title:
ETCHING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BY UTILIZING SAME
Document Type and Number:
WIPO Patent Application WO/2018/124705
Kind Code:
A8
Abstract:
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a first additive, and a solvent. The etching composition can minimize the etching rate of oxide film while selectively removing nitride film, and does not have issues that adversely affect the quality of the element, such particle generation, and is highly selective.
Inventors:
PARK JAE-WAN (KR)
LIM JUNG-HUN (KR)
LEE JIN-UK (KR)
LIM JUNG-HUN (KR)
LEE JIN-UK (KR)
Application Number:
PCT/KR2017/015497
Publication Date:
August 02, 2018
Filing Date:
December 26, 2017
Export Citation:
Assignee:
SOULBRAIN CO LTD (KR)
International Classes:
C09K13/06; C09K13/04; H01L21/306; H01L21/3213
Attorney, Agent or Firm:
CHEON JEE INTERNATIONAL PATENT & LAW FIRM (KR)
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