Title:
ETCHING COMPOSITION, ETCHING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR GATE-ALL-AROUND TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2022/153658
Kind Code:
A1
Abstract:
An etching composition that includes a C8 or higher quaternary ammonium salt (A) and selectively dissolves silicon relative to silicon germanium. The etching composition may also include a chelating agent (B). An etching method that involves using the etching composition to etch a structure that includes silicon and silicon germanium. The present invention provides: an etching composition that achieves excellent selective dissolution of silicon relative to silicon germanium, suppressing the dissolution of silicon germanium but promoting the dissolution of silicon; and an etching method, a production method for a semiconductor device, and a production method for a gate-all-around transistor that use the etching composition.
Inventors:
HARADA KEN (JP)
SUZUKI TATSUNOBU (JP)
ABE MARI (JP)
SUZUKI TATSUNOBU (JP)
ABE MARI (JP)
Application Number:
PCT/JP2021/041868
Publication Date:
July 21, 2022
Filing Date:
November 15, 2021
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
International Classes:
H01L21/308; H01L21/336; H01L29/78
Domestic Patent References:
| WO2015103146A1 | 2015-07-09 |
Foreign References:
| JP2019050364A | 2019-03-28 | |||
| JP2021002880A | 2021-01-07 |
Attorney, Agent or Firm:
SHIGENO, Tsuyoshi et al. (JP)
Download PDF:
Previous Patent: REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
Next Patent: PICKING SYSTEM AND METHOD FOR CONTROLLING PICKING SYSTEM
Next Patent: PICKING SYSTEM AND METHOD FOR CONTROLLING PICKING SYSTEM