Title:
ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/163931
Kind Code:
A1
Abstract:
[Problem] To provide an etching device that suppresses over-etching of a group III nitride semiconductor. [Solution] An etching device 1000 has a processing chamber 1001, a susceptor 1100, a gas supply unit 1500, a plasma-generating unit 1300, and a first potential-imparting unit 1200. The plasma-generating unit 1300 generates inductively coupled plasma. A first gas is a chlorine-based mixed gas containing Cl2 and BCl3. The first potential-imparting unit 1200 imparts to the susceptor 1100 a bias of an absolute value that decreases as the volume ratio of the BCl3 in the first gas increases. The first potential-imparting unit 1200 imparts to the susceptor 1100 a bias so as to satisfy the relationship –1200•X + 290 ≤ Vpp ≤ –1200•X + 480.
Inventors:
HORI MASARU (JP)
TANIDE ATSUSHI (JP)
HORIKOSHI AKIRA (JP)
NAKAMURA SHOHEI (JP)
TAKATSUJI SHIGERU (JP)
KONO MOTOHIRO (JP)
KINOSE KAZUO (JP)
TANIDE ATSUSHI (JP)
HORIKOSHI AKIRA (JP)
NAKAMURA SHOHEI (JP)
TAKATSUJI SHIGERU (JP)
KONO MOTOHIRO (JP)
KINOSE KAZUO (JP)
Application Number:
PCT/JP2018/007503
Publication Date:
September 13, 2018
Filing Date:
February 28, 2018
Export Citation:
Assignee:
UNIV NAGOYA NAT UNIV CORP (JP)
SCREEN HOLDINGS CO LTD (JP)
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JPH09129930A | 1997-05-16 | |||
| JP2017022368A | 2017-01-26 | |||
| JP2006108268A | 2006-04-20 | |||
| JP2004022974A | 2004-01-22 | |||
| US20110243520A1 | 2011-10-06 |
Attorney, Agent or Firm:
FUJITANI Osamu et al. (JP)
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