Title:
ETCHING LIQUID, METHOD FOR TREATING SUBSTANCE USING ETCHING LIQUID, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/167220
Kind Code:
A1
Abstract:
In manufacturing of a semiconductor device, there have been cases in which silicon carbonitride having exceptional dielectric characteristics and other properties is used. During such manufacturing, it is often necessary to etch the silicon carbonitride without etching silicon oxide, but there has been no known etching liquid that etches carbon-containing silicon carbonitride with sufficient selectivity to the same extent as with silicon nitride used for similar purposes. The present invention addresses the problem of providing: an etching liquid having a high etching selection ratio for silicon carbonitride relative to silicon oxide; a method for treating a substrate, the method including a step for bringing a substrate into contact with the aforementioned etching liquid; and a method for manufacturing a semiconductor substrate, the method including the aforementioned method for treating a substrate. The aforementioned problem is solved by an etching liquid for etching silicon carbonitride, the etching liquid comprising a uniform solution containing phosphoric acid, water, and selenium ions.
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Inventors:
OSHIO MANAMI (JP)
NOMURA NAOTO (JP)
NOMURA NAOTO (JP)
Application Number:
PCT/JP2023/007478
Publication Date:
September 07, 2023
Filing Date:
March 01, 2023
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
H01L21/306; H01L21/308
Foreign References:
| JP2022018498A | 2022-01-27 | |||
| JP2006229215A | 2006-08-31 | |||
| JP2007049145A | 2007-02-22 |
Attorney, Agent or Firm:
IP FIRM SHUWA (JP)
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