Title:
ETCHING LIQUID, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/069517
Kind Code:
A1
Abstract:
An etching liquid for processing a substrate that has a first layer containing titanium nitride (TiN) and a second layer containing at least one metal that is selected from among group 3-11 transition metals, which selectively removes the first layer. This etching liquid contains an inorganic compound that is represented by formula (1), an oxidant, and an anti-corrosion agent for the second layer. Hal-Q (1) (In the formula, Hal represents a halogen atom, and Q represents an atom or an atomic group that forms a monovalent cation.)
Inventors:
MIZUTANI ATSUSHI (JP)
KAMIMURA TETSUYA (JP)
INABA TADASHI (JP)
KAMIMURA TETSUYA (JP)
INABA TADASHI (JP)
Application Number:
PCT/JP2013/079380
Publication Date:
May 08, 2014
Filing Date:
October 30, 2013
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/308; H01L21/306; H01L21/3205; H01L21/768
Foreign References:
| JP2009019255A | 2009-01-29 | |||
| JP2009021516A | 2009-01-29 | |||
| JP2009044129A | 2009-02-26 | |||
| JP2008285508A | 2008-11-27 | |||
| JP2008547202A | 2008-12-25 | |||
| JP2001007197A | 2001-01-12 | |||
| JP2001077118A | 2001-03-23 |
Attorney, Agent or Firm:
IIDA, Toshizo et al. (JP)
Toshizo Iida (JP)
Toshizo Iida (JP)
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