Title:
ETCHING METHOD AND ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/215556
Kind Code:
A1
Abstract:
The present invention adequately performs etching of a substrate, the surface of which is provided with a mask layer and a multilayer film that is to be etched. An etching method according to the present invention comprises: (a) a step for providing a substrate which comprises a multilayer film wherein silicon oxide films and silicon nitride films are alternately stacked, and a mask that is arranged on the multilayer film; (b) a step for applying a pulse voltage to a substrate supporting body that supports the substrate; and (c) a step for etching the substrate by means of a plasma that is generated from a processing gas which contains an oxygen-containing gas and a hydrofluorocarbon gas that has an unsaturated bond and a CF3 group.
Inventors:
TOHNOE KAZUHITO (JP)
Application Number:
PCT/JP2022/014615
Publication Date:
October 13, 2022
Filing Date:
March 25, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| US20200294771A1 | 2020-09-17 | |||
| JP2020126776A | 2020-08-20 | |||
| JP2012114402A | 2012-06-14 | |||
| JP2017050529A | 2017-03-09 | |||
| JP2011211168A | 2011-10-20 | |||
| JP2020178099A | 2020-10-29 |
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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