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Patent Searching and Data


Title:
ETCHING METHOD AND ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/115008
Kind Code:
A1
Abstract:
Disclosed is an etching method in which a substrate (S) mounted on a stage electrode (3) in a vacuum chamber (1) is etched in the thickness direction of the substrate (S), and in which: an etching gas is supplied to the vacuum chamber (1); high frequency electric power is supplied to the stage electrode (3) at a frequency between 60 MHz and 150 MHz inclusive; and etching is carried out at a pressure such that the energy distribution of ions incident on the substrate (S) has a pair of first peaks which occur at the edge of the high-energy side of the energy distribution and which are caused by different electric field accelerations in accordance with the frequency of the high frequency electric power, and a second peak which occurs in a lower energy range than the pair of first peaks and which has a higher intensity than the pair of first peaks.

Inventors:
MORIKAWA YASUHIRO (JP)
MURAYAMA TAKAHIDE (JP)
YOSHII MANABU (JP)
MIZUTANI NAOKI (JP)
Application Number:
PCT/JP2011/055767
Publication Date:
September 22, 2011
Filing Date:
March 11, 2011
Export Citation:
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Assignee:
ULVAC INC (JP)
MORIKAWA YASUHIRO (JP)
MURAYAMA TAKAHIDE (JP)
YOSHII MANABU (JP)
MIZUTANI NAOKI (JP)
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
WO2003085717A12003-10-16
Foreign References:
JP2003234331A2003-08-22
JP2002093776A2002-03-29
JP2007103876A2007-04-19
Attorney, Agent or Firm:
ONDA, Hironori et al. (JP)
Hironori Onda (JP)
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Claims: