Title:
ETCHING METHOD AND ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/058582
Kind Code:
A1
Abstract:
An etching method according to an illustrative embodiment comprises: (a) a step for forming a first layer including a nitrogen atom and a hydrogen atom on a surface of a film to be etched, using a first processing gas; (b) a step for reforming the first layer into a second layer using a second processing gas including a halogen atom and a hydrogen atom; and (c) a step for etching the film to be etched having the second layer formed on the surface thereof, using a plasma generated from a third processing gas.
Inventors:
FUKUNAGA YUSUKE (JP)
GOHIRA TAKU (JP)
GOHIRA TAKU (JP)
Application Number:
PCT/JP2022/036800
Publication Date:
April 13, 2023
Filing Date:
September 30, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2020522131A | 2020-07-27 | |||
| JP2020004837A | 2020-01-09 | |||
| JP2020053615A | 2020-04-02 | |||
| JP2001085405A | 2001-03-30 | |||
| JPH05160085A | 1993-06-25 | |||
| JP2009158774A | 2009-07-16 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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