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Title:
AN ETCHING METHOD IN FABRICATIONS OF MICROSTRUCTURES
Document Type and Number:
WIPO Patent Application WO2005035090
Kind Code:
A3
Abstract:
The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material, Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same, The time duration of the feeding cycles are individually adjustable.

Inventors:
SCHAADT GREGORY P (US)
HONGQIN SHI (US)
Application Number:
PCT/US2004/027573
Publication Date:
May 26, 2005
Filing Date:
August 25, 2004
Export Citation:
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Assignee:
REFLECTIVITY INC (US)
SCHAADT GREGORY P (US)
HONGQIN SHI (US)
International Classes:
C23F1/00; G01R31/00; H01L21/00; H01L21/302; H01L21/461; B01D; (IPC1-7): C23F1/00; G01R31/00; H01L21/00; H01L21/302
Foreign References:
US6162367A2000-12-19
US6740247B12004-05-25
US4498983A1985-02-12
US6436229B22002-08-20
US6558559B12003-05-06
Other References:
WOLF S.: "Silicon Processing for the VLSi Era", LATTICE PRESS, vol. 1, 1986, pages 332-333,386,399,514,520,565-567
WOLF S.: "Silicon Processing for the VLSI Era", LATTICE PRESS, vol. 4, 2002, pages 66 - 67
ROSSNAGEL S.M.: "Handbook of Plasma Processing", 1990, NOYES PUBLICATIONS, pages: 200 - 201
ASHURST W.R.: "Dichlorodimethylsilane as an Anti-Stiction Monolayer for MEMS: A Comparison to the Octadecyltrichlosilane Self-Assembled Monolayer", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol. 10, no. 1, March 2001 (2001-03-01), pages 41
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