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Title:
ETCHING METHOD, ETCHING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2007/126091
Kind Code:
A1
Abstract:
Disclosed is an etching method which comprises a step for forming a metal fluoride layer as at least a part of en etching mask (3) to be formed on a semiconductor layer (2) at a temperature of not less than 150˚C; a step for patterning the metal fluoride layer; and a step for etching the semiconductor layer by using the patterned metal fluoride layer (3) as a mask. This etching method enables to easily etch a semiconductor layer such as a group III-V nitride semiconductor layer, which is hard to etch by conventional methods, by a comparatively simple process.

Inventors:
HORIE HIDEYOSHI (JP)
Application Number:
PCT/JP2007/059273
Publication Date:
November 08, 2007
Filing Date:
April 30, 2007
Export Citation:
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Assignee:
MITSUBISHI CHEM CORP (JP)
HORIE HIDEYOSHI (JP)
International Classes:
H01L21/3065; C23C14/06; H01L21/308; H01L33/00
Foreign References:
JPH0228334A1990-01-30
JP2001194506A2001-07-19
JPH0536648A1993-02-12
JP2004063658A2004-02-26
JPH01278015A1989-11-08
JP2000199802A2000-07-18
JPH07227687A1995-08-29
JPH11150303A1999-06-02
JP2002026384A2002-01-25
JPH06310471A1994-11-04
JPH0536648A1993-02-12
Other References:
See also references of EP 2023382A4
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 8, 1990, pages 28
Attorney, Agent or Firm:
ITO, Katsuhiro et al. (3-10-9 Nihombashi-Kayabach, Chuo-ku Tokyo 25, JP)
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