Title:
ETCHING METHOD, METHOD FOR REMOVING ETCHING RESIDUE, AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2020/066172
Kind Code:
A1
Abstract:
This etching method comprises: a step for preparing a substrate having a portion to be etched; a step for plasma-etching the portion to be etched of the substrate into a predetermined pattern by using plasma of a treatment gas containing CF-based gas; and then a step for removing a CF-based deposited matter which remains as an etching residue, wherein the step for removing the CF-based deposited matter has a step for forming an oxide including an oxide of the CF-based deposited matter by means of an oxygen-containing radical, and a step for removing the resulting oxide by means of radical treatment or chemical treatment using gas.
Inventors:
TAKAHASHI NOBUHIRO (JP)
TANOUCHI KEIJI (JP)
IRIE SHINJI (JP)
SHIMIZU AKITAKA (JP)
TANOUCHI KEIJI (JP)
IRIE SHINJI (JP)
SHIMIZU AKITAKA (JP)
Application Number:
PCT/JP2019/024959
Publication Date:
April 02, 2020
Filing Date:
June 24, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2018093189A | 2018-06-14 | |||
| JPH10256232A | 1998-09-25 | |||
| JP2007266609A | 2007-10-11 | |||
| JP2005039185A | 2005-02-10 | |||
| JP2015523734A | 2015-08-13 |
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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