Title:
ETCHING METHOD AND SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/134558
Kind Code:
A1
Abstract:
An etching method and a substrate. The etching method comprises: putting a substrate to be etched and coated with a photoresist layer (201) into an etching solution, and etching a metal layer (202) of the substrate to be etched, so as to obtain a first substrate; and using reactive ion etching technology to etch a first insulation layer (203) in the first substrate, and removing the photoresist layer (201) after etching, so as to obtain a substrate with a second insulation layer (204) not being etched. The method effectively avoids over-etching for a substrate caused by the ICP etching technology, thereby ensuring the uniformity and reliability of a substrate obtained after etching.
Inventors:
YE JIANGBO (CN)
Application Number:
PCT/CN2015/073986
Publication Date:
September 01, 2016
Filing Date:
March 11, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/311
Foreign References:
| KR100670039B1 | 2007-07-09 | |||
| CN1553517A | 2004-12-08 | |||
| JPH06333948A | 1994-12-02 | |||
| US20050101062A1 | 2005-05-12 | |||
| CN1532305A | 2004-09-29 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
北京聿宏知识产权代理有限公司 (CN)
北京聿宏知识产权代理有限公司 (CN)
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