Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/044975
Kind Code:
A1
Abstract:
Provided is an etching method for an Si substrate which is capable of performing etching in a surface state that is highly superior in smoothness and planarity across a wide area. On the basis of measurement values obtained by measuring, during processing, a liquid temperature at one or more predetermined positions along a direction of movement of etching liquid supplied to the surface of a Si substrate, the temperature of the etching liquid flowing on the surface is controlled with a rough degree of precision, etching processing is performed using an alkaline-based etching liquid, and next, finishing etching processing is performed using an acid-based etching liquid.
Inventors:
SAKAI TAKESHI (JP)
YOSHIKAWA KAZUHIRO (JP)
YOSHIDA TATSURO (JP)
SHIRAI YASUYUKI (JP)
YOSHIKAWA KAZUHIRO (JP)
YOSHIDA TATSURO (JP)
SHIRAI YASUYUKI (JP)
Application Number:
PCT/JP2013/005678
Publication Date:
April 02, 2015
Filing Date:
September 25, 2013
Export Citation:
Assignee:
UNIV TOHOKU (JP)
SAKAI TAKESHI (JP)
YOSHIKAWA KAZUHIRO (JP)
YOSHIDA TATSURO (JP)
SHIRAI YASUYUKI (JP)
SAKAI TAKESHI (JP)
YOSHIKAWA KAZUHIRO (JP)
YOSHIDA TATSURO (JP)
SHIRAI YASUYUKI (JP)
International Classes:
H01L21/306
Foreign References:
| JP2012064968A | 2012-03-29 | |||
| JP2003100701A | 2003-04-04 | |||
| JP2005217226A | 2005-08-11 | |||
| JP2000150434A | 2000-05-30 | |||
| JP2000077381A | 2000-03-14 | |||
| JPH04357835A | 1992-12-10 |
Attorney, Agent or Firm:
OHTSUKA, Yasunori et al. (JP)
Yasunari Otsuka (JP)
Yasunari Otsuka (JP)
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