Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/208807
Kind Code:
A1
Abstract:
A method for employing plasma processing with respect to a body to be processed in order to selectively etch a first region R1 comprising silicon oxide with respect to a second region R2 comprising silicon nitride. The body to be processed includes the second region R2 defining a recess, the first region R1 filling the recess, and a mask MK disposed on the first region R1. The method comprises a first step of generating a plasma of processing gas including fluorocarbon gas, and a second step of etching the first region by means of a fluorocarbon radical contained in a deposit, the second step including a pulse wave-formed application of high-frequency electric power that contributes to plasma formation, wherein the steps are repeated.
Inventors:
HATAZAKI YOSHINARI (JP)
ISHIDA WAKAKO (JP)
TANIGUCHI KENSUKE (KR)
ISHIDA WAKAKO (JP)
TANIGUCHI KENSUKE (KR)
Application Number:
PCT/JP2017/018347
Publication Date:
December 07, 2017
Filing Date:
May 16, 2017
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/28; H01L21/768
Foreign References:
| JP2016048771A | 2016-04-07 | |||
| JP2016058590A | 2016-04-21 | |||
| JP2016027594A | 2016-02-18 | |||
| JP2015216208A | 2015-12-03 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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