Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/150638
Kind Code:
A1
Abstract:
An etching method for etching a substrate using a molten alkali, wherein, while an oxide coating is formed on the surface of the substrate PL to be etched in a high-temperature oxygen-containing environment, the surface to be etched is isotropically etched to remove the oxide coating using a molten alkali AL brought into a prescribed high-temperature range.
Inventors:
IKENO JUNICHI (JP)
YAMADA YOHEI (JP)
SUZUKI HIDEKI (JP)
YAMADA YOHEI (JP)
SUZUKI HIDEKI (JP)
Application Number:
PCT/JP2017/038671
Publication Date:
August 23, 2018
Filing Date:
October 26, 2017
Export Citation:
Assignee:
SHINETSU POLYMER CO (JP)
NATIONAL UNIV CORPORATION SAITAMA UNIV (JP)
NATIONAL UNIV CORPORATION SAITAMA UNIV (JP)
International Classes:
H01L21/306; B23K26/53; H01L21/308
Foreign References:
| JP2015123466A | 2015-07-06 | |||
| JP2011181790A | 2011-09-15 | |||
| JP2008028178A | 2008-02-07 | |||
| JP2016207968A | 2016-12-08 |
Other References:
HOMMYO, TAKUYA: "Mirror surface processing of SiC with high-efficiency using wet etching by sodium hydroxide", 2016 THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 20 August 2016 (2016-08-20), pages 223 - 224
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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