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Patent Searching and Data


Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/188450
Kind Code:
A1
Abstract:
An etching method, including: a step for readying a workpiece including a metal multilayer film which includes a magnetic tunnel junction, and a mask formed by a non-organic material on the metal multilayer film; and a step for etching the metal multilayer film using a mask by means of a plasma of a gas mixture of ethylene gas and oxygen gas.

Inventors:
ANDOU Ken (Akasaka Biz Tower 3-1 Akasaka 5-chome, Minato-k, Tokyo 25, 〒1076325, JP)
MAEHARA Hiroki (Akasaka Biz Tower 3-1 Akasaka 5-chome, Minato-k, Tokyo 25, 〒1076325, JP)
SATO Jun (1 Techno Hills Taiwa-cho, Kurokawa-gu, Miyagi 29, 〒9813629, JP)
MAEDA Kiyoshi (1 Techno Hills Taiwa-cho, Kurokawa-gu, Miyagi 29, 〒9813629, JP)
TAHARA Shigeru (1 Techno Hills Taiwa-cho, Kurokawa-gu, Miyagi 29, 〒9813629, JP)
Application Number:
JP2019/010969
Publication Date:
October 03, 2019
Filing Date:
March 15, 2019
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-ku Tokyo, 25, 〒1076325, JP)
International Classes:
H01L21/3065; H01L21/8239; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
WO2012176747A12012-12-27
Foreign References:
US20140061827A12014-03-06
JP2008504683A2008-02-14
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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