Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/209982
Kind Code:
A1
Abstract:
A continuous or cyclic etching method for etching a metal carbide over a metal nitride is disclosed. The etching method includes the following steps: supplying plasma that is generated from a gas mixture that contains N2 and H2 and does not contain halogen gases including fluorine, chlorine, bromine, and iodine to a surface of metal carbide on at least a part of the surface, to modify the surface of metal carbide, and removing the modified surface on metal carbide by ion irradiation or by heating.
Inventors:
NGUYEN THI-THUY-NGA (JP)
ISHIKAWA KENJI (JP)
HORI MASARU (JP)
SHINODA KAZUNORI (JP)
HAMAMURA HIROTAKA (JP)
ISHIKAWA KENJI (JP)
HORI MASARU (JP)
SHINODA KAZUNORI (JP)
HAMAMURA HIROTAKA (JP)
Application Number:
PCT/JP2022/019384
Publication Date:
November 02, 2023
Filing Date:
April 28, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Foreign References:
| US20150132953A1 | 2015-05-14 | |||
| US20190088555A1 | 2019-03-21 | |||
| US20070187362A1 | 2007-08-16 | |||
| US20170167032A1 | 2017-06-15 | |||
| US20170084542A1 | 2017-03-23 | |||
| US20160126071A1 | 2016-05-05 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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