ETCHING SOLUTION, ETCHED ARTICLE AND METHOD FOR ETCHED ARTICLE

Title:

ETCHING SOLUTION, ETCHED ARTICLE AND METHOD FOR ETCHED ARTICLE

Document Type and Number:

WIPO Patent Application WO/2000/031785

Kind Code:

A1

Abstract:

An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25 °C.

Inventors:

Kezuka, Takehiko (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)
Suyama, Makoto (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)
Itano, Mitsushi (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)

Application Number:

PCT/JP1999/006502

Publication Date:

June 02, 2000

Filing Date:

November 22, 1999

Export Citation:

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Assignee:

DAIKIN INDUSTRIES, LTD. (Umeda Center Building 4-12, Nakazaki-nishi 2-chome Kita-ku Osaka-shi, Osaka, 530-8323, JP)
Kezuka, Takehiko (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)
Suyama, Makoto (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)
Itano, Mitsushi (Yodogawa Seisakusho Daikin Industries Ltd, 1-, Nishihitotsuya Settsu-shi Osaka, 566-0044, JP)

International Classes:

H01L21/308; C03C15/00; C09K13/08; C23F1/16; H01L21/311; C03C15/00; C09K13/00; C23F1/10; H01L21/02; (IPC1-7): H01L21/306; H01L21/308; C09K13/08

Attorney, Agent or Firm:

Saegusa, Eiji (Kitahama TNK Building 1-7-1, Doshomachi Chuo-ku Osaka-shi, Osaka, 541-0045, JP)

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