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Title:
ETCHING SOLUTION, ETCHING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
Document Type and Number:
WIPO Patent Application WO/2018/168874
Kind Code:
A1
Abstract:
An etching solution according to one embodiment of the present invention, which is an etching solution to be used for etching silicon nitride, comprises phosphoric acid, an acid having an acid dissociation index smaller than the first acid dissociation index pKa1 of phosphoric acid, a silicic acid compound, and water. The ratio (M1/M2) of the mass M1 of phosphoric acid to the mass M2 of the acid is within the range of 0.82-725 inclusive.

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Inventors:
MURAKAMI YUKAKO (JP)
HIRAKAWA MASAAKI (JP)
UEMATSU IKUO (JP)
Application Number:
PCT/JP2018/009795
Publication Date:
September 20, 2018
Filing Date:
March 13, 2018
Export Citation:
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Assignee:
TOSHIBA KK (JP)
International Classes:
H01L21/308
Foreign References:
JP2008311436A2008-12-25
JP2009021538A2009-01-29
US20170062231A12017-03-02
Attorney, Agent or Firm:
KURATA, Masatoshi et al. (JP)
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