ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN

Title:

ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN

Document Type and Number:

WIPO Patent Application WO/2011/099624

Kind Code:

A1

Abstract:

Disclosed are: an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and a method for etching a multilayer thin film having a copper layer and a molybdenum layer contained therein using the etching solution. Specifically disclosed are: an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which comprises (A) hydrogen peroxide, (B) an inorganic acid having no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms and also having an amino group and a hydroxy group in the total number of two or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH value of 2.5 to 5; and an etching method using the etching solution.

More Like This:

JP5885971	Etching solution for copper and copper alloys
JP5860174	Manufacturing method of electrodes for lithium secondary batteries

Inventors:

OKABE SATOSHI (JP)
NARITA KAZUYO (JP)
MATSUBARA MASAHIDE (JP)
ADANIYA TOMOYUKI (JP)
MARUYAMA TAKETO (JP)

Application Number:

PCT/JP2011/053151

Publication Date:

August 18, 2011

Filing Date:

February 15, 2011

Export Citation:

Click for automatic bibliography generation Help

Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)
OKABE SATOSHI (JP)
NARITA KAZUYO (JP)
MATSUBARA MASAHIDE (JP)
ADANIYA TOMOYUKI (JP)
MARUYAMA TAKETO (JP)

International Classes:

C23F1/18; C23F1/30; H01L21/308; H01L21/3205; H01L21/3213; H01L23/52

Foreign References:

JP2002060980A	2002-02-28
JP2002302780A	2002-10-18
JP2009076601A	2009-04-09
JP2006111953A	2006-04-27
JPH01292890A	1989-11-27
JP4282927B2	2009-06-24
JP2004193620A	2004-07-08

Other References: