Title:
EUV EXPOSURE METHOD, EUV EXPOSURE SYSTEM AND EUV EXPOSURE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2004/047155
Kind Code:
A1
Abstract:
A photosensitive substrate (4) comprises a resist layer (2) formed on a wafer (3) and a gas emission preventing layer (1) formed on the resist layer (2). In order to form such a photosensitive substrate (4), firstly a resist is applied onto a wafer (3) using a resist application apparatus, and then dried to form a resist layer (2). Next, a gas emission preventing layer (1) is formed on the resist layer (2) by a sputtering method. When an exposure is carried out using a photosensitive substrate (4) having such a gas emission preventing layer (1), emission of a gas from the resist layer (2) can be effectively suppressed. Consequently, a carbon layer is not formed on surfaces of optical system components such as a multilayer-film reflection mirror even when the exposure is carried out for a long time, and thus deterioration in the reflectance can be prevented.
Inventors:
MURAKAMI KATSUHIKO (JP)
Application Number:
PCT/JP2003/014620
Publication Date:
June 03, 2004
Filing Date:
November 18, 2003
Export Citation:
Assignee:
NIKON CORP (JP)
MURAKAMI KATSUHIKO (JP)
MURAKAMI KATSUHIKO (JP)
International Classes:
G03F7/11; G03F7/20; (IPC1-7): H01L21/027; G03F7/20
Foreign References:
| JPH0219850A | 1990-01-23 | |||
| JPH03112121A | 1991-05-13 | |||
| JPS60224223A | 1985-11-08 | |||
| JPS60222849A | 1985-11-07 | |||
| JPH02108056A | 1990-04-19 |
Attorney, Agent or Firm:
Hosoe, Toshiaki (3-6 Nishikanagawa 1-Chome, Kanagawa-k, Yokohama-Shi Kanagawa, JP)
Download PDF: