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Title:
EXHAUST GAS PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2012/014497
Kind Code:
A1
Abstract:
In the present disclosures, a mixed gas containing monosilane is discharged from a semiconductor production device (1). A pump unit (2) sucks the mixed gas discharged from the semiconductor production device (1), and sends the mixed gas to a later-stage silane gas processing unit (20). Argon gas is used as a purging gas in the pump unit (2). The silane gas processing unit (20) process the mixed gas that contains at least monosilane and argon and that is discharged from the semiconductor production device (1) through the pump unit (2), and isolates, recovers, and recycles the monosilane. A noble gas processing unit (30) isolates, recovers, and recycles the argon from the mixed gas. The argon recovered by the noble gas processing unit (30) is used as the purging gas of the pump unit (2).

Inventors:
OHUCHI, Tai (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)
大内 太 (〒62 東京都千代田区大手町二丁目6番3号JX日鉱日石エネルギー株式会社内 Tokyo, 〒1008162, JP)
OKABE, Takashi (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)
Application Number:
JP2011/004329
Publication Date:
February 02, 2012
Filing Date:
July 29, 2011
Export Citation:
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Assignee:
JX NIPPON OIL & ENERGY CORPORATION (6-3 Otemachi 2-chome, Chiyoda-ku Tokyo, 62, 〒1008162, JP)
JX日鉱日石エネルギー株式会社 (〒62 東京都千代田区大手町二丁目6番3号 Tokyo, 〒1008162, JP)
OHUCHI, Tai (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)
大内 太 (〒62 東京都千代田区大手町二丁目6番3号JX日鉱日石エネルギー株式会社内 Tokyo, 〒1008162, JP)
International Classes:
B01D53/46; C01B33/04; H01L21/205
Attorney, Agent or Firm:
MORISHITA, Sakaki (2-11-12, Ebisu-Nishi Shibuya-k, Tokyo 21, 〒1500021, JP)
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Claims:



 
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