EXHAUST-GAS TREATMENT SYSTEM

WIPO Patent Application WO/2011/111403

A1

Exhaust-gas treatment system 100 treats mixed gases including at least hydrogen and silane emitted from semiconductor manufacturing equipment 1. The exhaust-gas treatment system 100 is equipped with a pump portion 2 that exhausts mixed gas emitted from the semiconductor manufacturing equipment; compressor 11 that compresses and feeds the mixed gas exhausted from the pump portion 2 to a subsequent stage; gas-storage portion 3 that collects and stores the compressed mixed gas; a flow-amount control portion 4 that controls a flow amount of mixed gas supplied from the gas-storage portion 3; and membrane-separation portion 6 that selectively transmits hydrogen to separate silane and hydrogen from the mixed gas. This mitigates pressure fluctuations of mixed gases emitted from the semiconductor manufacturing equipment 1 to enable stable operation of an exhaust-gas treatment system.

OHUCHI, Tai (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)
大内　太 (〒62 東京都千代田区大手町二丁目６番３号ＪＸ日鉱日石エネルギー株式会社内 Tokyo, 〒1008162, JP)
OKABE, Takashi (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)

JP2011/001474

September 15, 2011

March 14, 2011

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JX NIPPON OIL & ENERGY CORPORATION (6-3 Otemachi 2-chome, Chiyoda-ku Tokyo, 62, 〒1008162, JP)
ＪＸ日鉱日石エネルギー株式会社 (〒62 東京都千代田区大手町二丁目６番３号 Tokyo, 〒1008162, JP)
OHUCHI, Tai (6-3 Otemachi 2-chome, Chiyoda-k, Tokyo 62, 〒1008162, JP)
大内　太 (〒62 東京都千代田区大手町二丁目６番３号ＪＸ日鉱日石エネルギー株式会社内 Tokyo, 〒1008162, JP)

B01D53/22; C01B3/00; C01B33/04; C23C16/44; F23J15/00; H01L21/205

MORISHITA, Sakaki (2-11-12, Ebisu-Nishi Shibuya-k, Tokyo 21, 〒1500021, JP)

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