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Title:
EXPANSION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/158766
Kind Code:
A1
Abstract:
An expansion method comprising a step for stretching a first sheet (10) to which a plurality of semiconductor devices (CP) are bonded and widening the interval between the plurality of semiconductor devices (CP), wherein each of the plurality of semiconductor devices (CP) has a first semiconductor device surface (W1) and a second semiconductor device surface (W3) on the reverse side from the first semiconductor device surface (W1), and each of the plurality of semiconductor devices (CP) includes a protective layer (100) between the second semiconductor device surface (W3) and the first sheet (10).

Inventors:
FUSE KEISHI (JP)
INAO YOUICHI (JP)
YAMADA TADATOMO (JP)
Application Number:
PCT/JP2020/003071
Publication Date:
August 06, 2020
Filing Date:
January 29, 2020
Export Citation:
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Assignee:
LINTEC CORP (JP)
International Classes:
C09J201/00; C09J7/38; H01L21/301
Domestic Patent References:
WO2017078050A12017-05-11
Foreign References:
JP2016127115A2016-07-11
JP2017204526A2017-11-16
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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