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Patent Searching and Data


Title:
EXPOSURE METHOD, EXPOSURE MASK, AND EXPOSURE APPARATUS
Document Type and Number:
WIPO Patent Application WO2004023211
Kind Code:
A3
Abstract:
An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask, wherein nonpolarized exposure light from a light source is projected onto an exposure mask having a light blocking film and a plurality of rectangular openings formed in the light blocking film, the openings having a width in a widthwise direction not greater than one-third of the exposure light and having its lengthwise directions extending in two or more directions along the mask surface, so that near-field light escaping from the openings is produced thereby to perform exposure of a pattern on the basis of the openings.

Inventors:
INAO YASUHISA
KURODA RYO
MIZUTANI NATSUHIKO
Application Number:
PCT/JP2003/011357
Publication Date:
October 14, 2004
Filing Date:
September 05, 2003
Export Citation:
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Assignee:
CANON KK (JP)
International Classes:
B82B3/00; B82Y10/00; B82Y40/00; G03F1/14; G03F1/50; G03F7/20; H01L21/027; (IPC1-7): G03F1/14; G03F7/20
Foreign References:
US6187482B12001-02-13
Other References:
BLAIKIE R J ET AL: "Nanolithography Using Optical Contact Exposure in the Evanescent Near Field", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 46, no. 1-4, May 1999 (1999-05-01), pages 85 - 88, XP004170674, ISSN: 0167-9317
ALKAISI M M ET AL: "70 nm Features on 140 nm Period Using Evanescent Near Field Optical Lithography", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 53, no. 1-4, June 2000 (2000-06-01), pages 237 - 240, XP004237762, ISSN: 0167-9317
ALKAISI M M ET AL: "NANOLITHOGRAPHY IN THE EVANESCENT NEAR FIELD", ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, vol. 13, no. 12/13, 4 July 2001 (2001-07-04), pages 877 - 887, XP001130146, ISSN: 0935-9648
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