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Title:
FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH MODIFIED SURFACE
Document Type and Number:
WIPO Patent Application WO/2015/177748
Kind Code:
A3
Abstract:
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

Inventors:
REINHARD PATRICK (CH)
PIANEZZI FABIAN (CH)
BISSIG BENJAMIN (CH)
BUECHELER STEPHAN (DE)
TIWARI AYODHYA NATH (CH)
Application Number:
PCT/IB2015/053736
Publication Date:
January 28, 2016
Filing Date:
May 21, 2015
Export Citation:
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Assignee:
FLISOM AG (CH)
EMPA (CH)
International Classes:
H01L21/02; H01L31/032; H01L31/0749
Domestic Patent References:
WO2010106534A12010-09-23
Foreign References:
US8404512B12013-03-26
US20040063320A12004-04-01
Other References:
ADRIAN CHIRILA ET AL: "Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells", NATURE MATERIALS, vol. 12, no. 12, 3 November 2013 (2013-11-03), pages 1107 - 1111, XP055208088, ISSN: 1476-1122, DOI: 10.1038/nmat3789
COJOCARU-MIRÉDIN O ET AL: "Exploring the p-n junction region in Cu(In,Ga)Sethin-film solar cells at the nanometer-scale", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 101, no. 18, 29 October 2012 (2012-10-29), pages 181603-1 - 181603-5, XP012165525, ISSN: 0003-6951, [retrieved on 20121102], DOI: 10.1063/1.4764527
PYUCK-PA CHOI ET AL: "Compositional gradients and impurity distributions in CuInSe2 thin-film solar cells studied by atom probe tomography", SURFACE AND INTERFACE ANALYSIS, vol. 44, no. 11-12, 18 November 2012 (2012-11-18), pages 1386 - 1388, XP055209088, ISSN: 0142-2421, DOI: 10.1002/sia.4948
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BALBOUL M R ET AL: "SODIUM INDUCED PHASE SEGREGATIONS IN CuGaSe2 AND CuInSe2 THIN FILMS", 17TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. MUNICH, GERMANY, OCT. 22 - 26, 2001; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], MUNICH : WIP-RENEWABLE ENERGIES, DE, vol. CONF. 17, 22 October 2001 (2001-10-22), pages 1015 - 1018, XP001139608, ISBN: 978-3-936338-08-9
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JEHL Z ET AL: "Insights on the influence of surface roughness on photovoltaic properties of state of the art copper indium gallium diselenide thin films solar cells", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 111, no. 11, 1 June 2012 (2012-06-01), pages 114509-1 - 114509-7, XP012157744, ISSN: 0021-8979, [retrieved on 20120606], DOI: 10.1063/1.4721648
Attorney, Agent or Firm:
CRONIN, Brian (Chemin de Précossy 31, 1260 Nyon, CH)
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