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Title:
FABRICATION METHOD FOR THIN FILM SOLAR CELL WITH KESTERITE ABSORBER
Document Type and Number:
WIPO Patent Application WO/2012/055738
Kind Code:
A3
Abstract:
A method of fabricating a thin film solar cell includes the following steps. A molybdenum (Mo)-coated substrate is provided. Absorber layer constituent components, two of which are sulfur (S) and selenium (Se), are deposited on the Mo-coated substrate. The S and Se are deposited on the Mo-coated substrate using thermal evaporation in a vapor chamber. Controlled amounts of the S and Se are introduced into the vapor chamber to regulate a ratio of the S and Se provided for deposition. The constituent components are annealed to form an absorber layer on the Mo-coated substrate. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Inventors:
WANG KEJIA (US)
SHIN BYUNGHA (US)
BOJARCZUK NESTOR (US)
GUHA SUPRATIK (US)
Application Number:
PCT/EP2011/068256
Publication Date:
March 28, 2013
Filing Date:
October 19, 2011
Export Citation:
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Assignee:
IBM (US)
IBM UK (GB)
WANG KEJIA (US)
SHIN BYUNGHA (US)
BOJARCZUK NESTOR (US)
GUHA SUPRATIK (US)
International Classes:
H01L31/18
Foreign References:
US20080072962A12008-03-27
Other References:
ZARETSKAYA E. P. ET AL: "Structural And Optical Properties Of Cu(In,Ga)(S,Se)2 Absorber Layers Obtained By Two-Step Growth", PROCEEDINGS OF THE 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE HELD IN DRESDEN, GERMANY, 4 - 8 SEPTEMBER 2006, 4 September 2006 (2006-09-04), pages 1920 - 1923, XP040512613, ISBN: 978-3-936338-20-1
YAMAGUCHI T ET AL: "Characterization Of CuIn(S,Se)2 Thin Films Prepared By Thermal Crystallization From Cu-In-Se Precursor In S/Se Atmosphere", PROCEEDINGS OF THE 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, OSAKA INTERNATIONAL CONGRESS CENTER, 18 May 2003 (2003-05-18), pages 410 - 413Vol.1, XP031987594, ISBN: 978-4-9901816-0-4
TURCU M ET AL: "Composition dependence of defect energies and band alignments in the Cu(In1-xGax)(Se1-ySy)2 alloy system", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 91, no. 3, 1 February 2002 (2002-02-01), pages 1391 - 1399, XP012055648, ISSN: 0021-8979, DOI: 10.1063/1.1432126
KAWAMURA M ET AL: "Cu(In,Ga)Se2 thin-film solar cells grown with cracked selenium", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 311, no. 3, 15 January 2009 (2009-01-15), pages 753 - 756, XP025947283, ISSN: 0022-0248, [retrieved on 20080930], DOI: 10.1016/J.JCRYSGRO.2008.09.091
BJÖRN-ARVID SCHUBERT ET AL: "Cu2ZnSnS4 thin film solar cells by fast coevaporation", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, vol. 19, no. 1, 31 May 2010 (2010-05-31), pages 93 - 96, XP055001284, ISSN: 1062-7995, DOI: 10.1002/pip.976
WANG K ET AL: "Thermally evaporated Cu2ZnSnS4 solar cells", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 97, no. 14, 5 October 2010 (2010-10-05), pages 143508-1 - 143508-3, XP012137203, ISSN: 0003-6951, DOI: 10.1063/1.3499284
Attorney, Agent or Firm:
LITHERLAND, David, Peter (Intellectual Property LawHursley Park, Winchester Hampshire SO21 2JN, GB)
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