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Patent Searching and Data


Title:
FABRICATION METHODS
Document Type and Number:
WIPO Patent Application WO/2019/099171
Kind Code:
A3
Abstract:
Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

Inventors:
VAN HOOGDALEM, Kevin (One Microsoft WayRedmond, Washington, 98052-7329, US)
KOUWENHOVEN, Leonardus (One Microsoft WayRedmond, Washington, 98052-7329, US)
ASEEV, Pavel (One Microsoft WayRedmond, Washington, 98052-7329, US)
KROGSTRUP JEPPESEN, Peter (One Microsoft WayRedmond, Washington, 98052-7329, US)
Application Number:
US2018/057841
Publication Date:
October 17, 2019
Filing Date:
October 26, 2018
Export Citation:
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Assignee:
MICROSOFT TECHNOLOGY LICENSING LLC (One Microsoft Way, Redmond, Washington, 98052-7329, US)
International Classes:
H01L27/18; B82Y10/00; G06N99/00; H01L29/06; H01L39/22; H01L39/24
Domestic Patent References:
WO2009029302A22009-03-05
Foreign References:
US20130299783A12013-11-14
US6517996B12003-02-11
US5652179A1997-07-29
KR20120092431A2012-08-21
Other References:
P. KROGSTRUP ET AL: "Epitaxy of semiconductor-superconductor nanowires", NATURE MATERIALS, vol. 14, no. 4, 1 April 2015 (2015-04-01), GB, pages 400 - 406, XP055458664, ISSN: 1476-1122, DOI: 10.1038/nmat4176
PRATYUSH DAS KANUNGO ET AL: "Paper;Selective area growth of III V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices;Selective area growth of III V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-de", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 24, no. 22, 1 May 2013 (2013-05-01), pages 225304, XP020245335, ISSN: 0957-4484, DOI: 10.1088/0957-4484/24/22/225304
J. SHABANI ET AL: "Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks", PHYSICAL REVIEW B, vol. 93, no. 15, 1 April 2016 (2016-04-01), XP055458738, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.155402
LUTCHYN R M ET AL: "Realizing Majorana zero modes in superconductor-semiconductor heterostructures", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 16 July 2017 (2017-07-16), XP080777086
Attorney, Agent or Firm:
BIBLE, Patrick (One Microsoft WayRedmond, Washington, 98052-7329, US)
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