Title:
Fe-Co-BASED ALLOY SPUTTERING TARGET MATERIAL, AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/183546
Kind Code:
A1
Abstract:
The present invention provides a Fe-Co-based alloy sputtering target material represented by a compositional formula (Fea-Co100-a)100-b-c-d-Tab-Nbc-Md (0 < a ≤ 80, 0 ≤ b ≤ 10, 0 ≤ c ≤ 15, 5 ≤ b+c ≤ 15, 2 ≤ d ≤ 20, 15 ≤ b+c+d ≤ 25, and M represents at least one element selected from the group consisting of Mo, Cr and W) when expressed in an atomic ratio, contains a remainder made up by unavoidable impurities, and has a percent bending fracture strain (εfB) of 0.4% or more at 300˚C.
Inventors:
FUKUOKA JUN (JP)
SAITO KAZUYA (JP)
SAKAMAKI KOUICHI (JP)
HATA TOMOYUKI (JP)
SAITO KAZUYA (JP)
SAKAMAKI KOUICHI (JP)
HATA TOMOYUKI (JP)
Application Number:
PCT/JP2013/065106
Publication Date:
December 12, 2013
Filing Date:
May 30, 2013
Export Citation:
Assignee:
HITACHI METALS LTD (JP)
International Classes:
C23C14/34; B22F3/14; C22C19/07; C22C38/00; G11B5/667; G11B5/851; B22F9/04; B22F9/08
Domestic Patent References:
| WO2009104509A1 | 2009-08-27 |
Foreign References:
| JP2010018884A | 2010-01-28 | |||
| JP2009167529A | 2009-07-30 | |||
| JP2008127588A | 2008-06-05 | |||
| JP2012169021A | 2012-09-06 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
Nakajima 淳 (JP)
Nakajima 淳 (JP)
Download PDF:
Previous Patent: GAS COMPRESSOR
Next Patent: SEMICONDUCTOR FERROELECTRIC STORAGE TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Next Patent: SEMICONDUCTOR FERROELECTRIC STORAGE TRANSISTOR AND METHOD FOR MANUFACTURING SAME